115mA, 60V, N Channel DMOS MOSFET. 2N7002E: 240mA, 60V, N Channel Small Signal MOSFET. 2N7002K: 300mA, 60V, Single N Channel Small Signal MOSFET. 3SK136: 0.035A, 20V, Silicon N-Channel Dual Gate MOSFET (AA Enabled) BF901/PLP: N-Channel Dual Gate MOS-FET. BF904/PLP: N-Channel Dual Gate MOS-FET. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3701 is a highly reliable FET device that has. FQP19N20, The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been. DMOS FET does not require a base current, and can accept high current density per device area, keeping on-resistance low. The series includes a through-hole DIP-16 package, strongly demanded by the equipment market for equipment market for hobbies, amusements, and industrial fields. It also includes a HSP-16 package with a heat sink for surface.
19N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 19N10
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 178 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Максимально допустимый постоянный ток стока |Id|: 15.6 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 150 ns
Выходная емкость (Cd): 165 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.078 Ohm
Тип корпуса: TO-3PTO-251TO-252TO-220TO-263
Dmos Vs Mosfet
19N10 Datasheet (PDF)
0.1. fqd19n10ltf fqd19n10ltm fqd19n10l fqu19n10l.pdf Size:688K _fairchild_semi
January 2009QFETFQD19N10L / FQU19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been
0.2. fqpf19n10l.pdf Size:616K _fairchild_semi
August 2000TMQFETQFETQFETQFETFQPF19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology h
0.3. fqb19n10ltm.pdf Size:611K _fairchild_semi
August 2000TMQFETQFETQFETQFETFQB19N10L / FQI19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced tec
0.4. fqb19n10tm.pdf Size:926K _fairchild_semi
October 2008QFETFQB19N10 / FQI19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been especially
0.5. fqpf19n10.pdf Size:581K _fairchild_semi
August 2000TMQFETQFETQFETQFETFQPF19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been
0.6. fqd19n10tf fqd19n10tm fqd19n10 fqu19n10.pdf Size:678K _fairchild_semi
January 2009QFETFQD19N10 / FQU19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been especial
0.7. fqp19n10l.pdf Size:626K _fairchild_semi
August 2000TMQFETQFETQFETQFETFQP19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has
0.8. fqp19n10.pdf Size:591K _fairchild_semi
August 2000TMQFETQFETQFETQFETFQP19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been es
0.9. 19n10.pdf Size:246K _utc
UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effecttransistors (MOSFET) are produced by UTCs planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance
Другие MOSFET... 2N7002ZT, UF3055, UTD3055, 12N06, 12N06Z, 15N06, 12N10, 15N20, 2SK163, 22N20, 25N06, 25N10, 30N06, 50N06, 60N06, 60N08, 6N10.
Dmos Power Mosfet
Список транзисторов
Обновления
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02Dmos Mosfet Tutorial
Dmos Mosfet Circuit
