115mA, 60V, N Channel DMOS MOSFET. 2N7002E: 240mA, 60V, N Channel Small Signal MOSFET. 2N7002K: 300mA, 60V, Single N Channel Small Signal MOSFET. 3SK136: 0.035A, 20V, Silicon N-Channel Dual Gate MOSFET (AA Enabled) BF901/PLP: N-Channel Dual Gate MOS-FET. BF904/PLP: N-Channel Dual Gate MOS-FET. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3701 is a highly reliable FET device that has. FQP19N20, The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been. DMOS FET does not require a base current, and can accept high current density per device area, keeping on-resistance low. The series includes a through-hole DIP-16 package, strongly demanded by the equipment market for equipment market for hobbies, amusements, and industrial fields. It also includes a HSP-16 package with a heat sink for surface.
19N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 19N10
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 178 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Максимально допустимый постоянный ток стока |Id|: 15.6 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 150 ns
Выходная емкость (Cd): 165 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.078 Ohm
Тип корпуса: TO-3PTO-251TO-252TO-220TO-263
Dmos Vs Mosfet
19N10 Datasheet (PDF)
0.1. fqd19n10ltf fqd19n10ltm fqd19n10l fqu19n10l.pdf Size:688K _fairchild_semi
January 2009QFETFQD19N10L / FQU19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been
0.2. fqpf19n10l.pdf Size:616K _fairchild_semi
August 2000TMQFETQFETQFETQFETFQPF19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology h
0.3. fqb19n10ltm.pdf Size:611K _fairchild_semi
August 2000TMQFETQFETQFETQFETFQB19N10L / FQI19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced tec
0.4. fqb19n10tm.pdf Size:926K _fairchild_semi
October 2008QFETFQB19N10 / FQI19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been especially
0.5. fqpf19n10.pdf Size:581K _fairchild_semi
August 2000TMQFETQFETQFETQFETFQPF19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been
0.6. fqd19n10tf fqd19n10tm fqd19n10 fqu19n10.pdf Size:678K _fairchild_semi
January 2009QFETFQD19N10 / FQU19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been especial
0.7. fqp19n10l.pdf Size:626K _fairchild_semi
August 2000TMQFETQFETQFETQFETFQP19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has
0.8. fqp19n10.pdf Size:591K _fairchild_semi
August 2000TMQFETQFETQFETQFETFQP19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been es
0.9. 19n10.pdf Size:246K _utc
UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effecttransistors (MOSFET) are produced by UTCs planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance
Другие MOSFET... 2N7002ZT, UF3055, UTD3055, 12N06, 12N06Z, 15N06, 12N10, 15N20, 2SK163, 22N20, 25N06, 25N10, 30N06, 50N06, 60N06, 60N08, 6N10.